Work

Effect of Low Level O2 Addition to N2 on Surface Cleaning by Nonequilibrium Atmospheric-Pressure Pulsed Remote Plasma

Year: 2007

Type: article

Abstract: The effect of O 2 additions below 0.2% to N 2 was investigated for the cleaning of organic contaminants on an indium tin oxide film using a nonequilibrium atmospheric-pressure pulsed plasma. A remarkably high cleaning efficiency was obtained for plasma treatment with additions from 0.025 to 0.1% O 2 to N 2 . The concentration of the ground state oxygen radical [O( 3 P)] was measured using vacuum UV laser absorption spectroscopy. It was found that the key factor for the surface cleaning was the scission of carbon bonds due to UV emissions, and subsequent oxidation due to O( 3 P) and ozone.

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.46.l540

Authors: Masahiro Iwasaki, Keigo Takeda, Masafumi Ito, Takuya Yara, Tsuyoshi Uehara, Masaru Hori

Institutions: Nagoya University, Wakayama University, Sekisui Chemical (Japan)

Language: English

Topic: Atmospheric-Pressure Plasma Applications

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W2010109730

FWCI: 1.449

Cites: 10

Cited by: 15

Related to: 10