Nonradiative recombination mechanisms in InGaN/GaN-based light-emitting diodes investigated by temperature-dependent measurements
Year: 2014
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.4871870
Institutions: Hanyang University, Sangji University
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2010142695