Work

Modélisation bidimensionnelle dynamique du transistor à effet de champ MESFET : application à la conception de profils optimisés pour fonctionnement en faible bruit

Year: 1988

Type: article

Abstract: A GaAs MESFET model, based on the two dimensional resolution of the semiconductor hydrodynamic equations, is presented. It includes a carrier energy relaxation equation, allowing to account for non stationary electron dynamic effects. It is shown that it is possible to obtain an accurate determination of the main equivalent circuit elements by using transient response and fast Fourier transform. This model is systematically used to study the influence of doping profile on device characteristics and the expected performances. The potential interest of burried channel devices is clearly shown under large signal and low noise conditions respectively. These conclusions are confirmed by experiment.

Source: Revue de Physique Appliquée

DOI: 10.1051/rphysap:019880023070118500

Authors: F. Heliodore, G. Salmer, Y. Druelle, M. Lefebvre, O. El Sayed

Institutions: Centre National de la Recherche Scientifique, Cairo University

Language: French

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2010167767

FWCI:

Cites: 16

Cited by: 1

Related to: 10