Response to ‘‘Comment on ‘Metal-insulator-semiconductor inversion layer solar cells by using rapid thermal processing’ ’’ [Appl. Phys. Lett. 68, 2905 (1996)]
Year: 1996
Type: article
Abstract: Record low surface recombination velocities on 1 Ω cm p-silicon using remote plasma silicon nitride passivation
Source: Applied Physics Letters
DOI: 10.1063/1.116328
Institution: Chemnitz University of Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2010200520