A WSi/TiN/Au Gate Self-Aligned GaAs MESFET with Selectively Grown n+-Layer using MOCVD
Year: 1984
Type: article
DOI: 10.1143/jjap.23.l342
Authors: Kenichi Imamura, Naoki Yokoyama, Toyokazu Ohnishi, Shoichi Suzuki, Kenya Nakai, Hidetoshi Nishi, Akihiro Shibatomi
Institution: Fujitsu (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2010399652