Work

Comparison of 600V Si, SiC and GaN Power Devices

Year: 2014

Type: article

Source: Materials science forum

DOI: 10.4028/www.scientific.net/msf.778-780.971

Authors: Sauvik Chowdhury, Zachary Stum, Zhong Da Li, Katsunori Ueno, T. Paul Chow

Institutions: Rensselaer Polytechnic Institute, General Electric (United States), GE Global Research (United States)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2010403190

FWCI: 0.69

Cites:

Cited by: 45

Related to: 10