Work

High-mobility modulation-doped SiGe-channel p-MOSFETs

Year: 1991

Type: article

Abstract: A novel subsurface SiGe-channel p-MOSFET is demonstrated in which modulation doping is used to control the threshold voltage without degrading the channel mobility. A novel device design consisting of a graded SiGe channel, an n/sup +/ polysilicon gate, and p/sup +/ modulation doping is used. A boron-doped layer is located underneath the graded and undoped SiGe channel to minimize process sensitivity and maximize transconductance. Low-field hole mobilities of 220 cm/sup 2//V-s at 300 K and 980 cm/sup 2//V-s at 82 K were achieved in functional submicrometer p-MOSFETs.>

Source: IEEE Electron Device Letters

DOI: 10.1109/55.119161

Authors: S. Verdonckt-Vandebroek, E.F. Crabbe, B.S. Meyerson, D.L. Harame, P.J. Restle, J.M.C. Stork, A.C. Megdanis, C.L. Stanis, A.A. Bright, G.M.W. Kroesen, A.C. Warren

Institutions: IBM (United States), IBM Research - Thomas J. Watson Research Center

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2010451022

FWCI: 9.41

Cites: 7

Cited by: 120

Related to: 10