Work

Longitudinal Hall‐Effect in n‐Type Germanium

Year: 1966

Type: article

Source: physica status solidi (b)

DOI: 10.1002/pssb.19660150103

Authors: P. I. Baranskii, I. V. Dakhovskii

Institution: National Academy of Sciences of Ukraine

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2010458563

FWCI: 0.349

Cites: 1

Cited by: 4

Related to: 10