Work

Minority carrier diffusion length in GaN and ZnSe

Year: 1998

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/s0022-0248(98)00286-3

Authors: Takao Miyajima, Masafumi Ozawa, Tsunenori Asatsuma, Hiroji Kawai, Masao Ikeda

Institution: Sony (Japan)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2010522137

FWCI: 1.312

Cites: 10

Cited by: 28

Related to: 10