Year: 2013
Type: conference-paper
Abstract: SiO x films were deposited in the temperature range of 800–1000 °C by hot wire chemical vapor deposition (HWCVD) technique. Annealing treatment for as-deposited samples was performed in nitrogen (N 2 ) atmosphere at 1100 °C. The effect of annealing atmosphere on the structural properties of the deposited films was investigated by means of micro Raman, X-ray diffraction (XRD), Photoluminescence (PL) and high resolution electron microscopy (HRTEM) measurements. Micro-Raman studies revealed an increase in the crystalline volume fraction (X c ) in the deposited films after annealing. XRD patterns of the annealed films showed the formation of silicon crystals. HRTEM images confirmed the presence of silicon nanocrystals (Si-ncs) in both as-deposited and annealed films. Furthermore, the annealing treatment on the as-deposited samples at 900 and 1000 °C resulted in the observation a large number of Si-ncs with sizes between 3–15 nm. PL measurement shows a broad emission from 400 to 1100 nm. This emission was related with both Si-ncs and interfacial defects present in SiO x films.
Authors: A Coyopol, T Díaz, G García, R López, H Juárez, E Rosendo, M Pacio, G Escalante
Institution: Benemérita Universidad Autónoma de Puebla
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W2010542496