Mechanism of n-doping of silicon carbide epitaxial films
Year: 2007
Type: article
Source: Journal of Crystal Growth
Authors: A. Fiorucci, D. Moscatelli, M. Masi
Institution: Politecnico di Milano
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2010577706