Work

Dependence of structural and electrical properties of AlGaN/GaN HEMT on Si(111) on buffer growth conditions by MBE

Year: 2013

Type: article

Source: Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

DOI: 10.1116/1.4803836

Authors: Partha Mukhopadhyay, Subhra Chowdhury, Andrew Wowchak, Amir Dabiran, Peter Chow, Dhrubes Biswas

Institutions: Indian Institute of Technology Kharagpur, SVT Associates (United States)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2010581996

FWCI: 1.715

Cites: 21

Cited by: 16

Related to: 10