An early in-situ stress signature of the AlN-Si pre-growth interface for successful integration of nitrides with (111) Si
Year: 2013
Type: article
Abstract: The integration of Metal Organic Chemical Vapor Deposition (MOCVD) grown group III-A nitride device stacks on Si (111) substrates is critically dependent on the quality of the first AlN buffer layer grown. A Si surface that is both oxide-free and smooth is a primary requirement for nucleating such layers. A single parameter, the AlN layer growth stress, is shown to be an early (within 50 nm), clear (<0.5 GPa versus >1 GPa), and fail-safe indicator of the pre-growth surface, and the AlN quality required for successful epitaxy. Grain coalescence model for stress generation is used to correlate growth stress, the AlN-Si interface, and crystal quality.
Source: Applied Physics Letters
DOI: 10.1063/1.4831968
Authors: Hareesh Chandrasekar, Nagaboopathy Mohan, Abheek Bardhan, K. N. Bhat, Navakanta Bhat, N. Ravishankar, Srinivasan Raghavan
Institution: Indian Institute of Science Bangalore
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2010585162