Multilayer silicon cavity mirrors for the far-infrared p-Ge laser
Year: 2005
Type: article
Abstract: Multilayer mirrors capable of > 99.9% reflectivity in the far infrared (70-200 microm wavelengths) were constructed using thin silicon etalons separated by empty gaps. Calculations indicate that only three periods are required to produce 99.9% reflectivity because of the large difference between the index of refraction of silicon (3.384) and the vacuum (1). The mirror was assembled from high-purity silicon wafers, with resistivity over 4000 omega cm to reduce free-carrier absorption. Wafers were double-side polished with faces parallel within 10 arc sec. The multilayer mirror was demonstrated as a cavity mirror for the far-infrared p-Ge laser. Dependence of reflectivity on design accuracy was considered.
Source: Applied Optics
DOI: 10.1364/ao.44.007191
Institution: University of Central Florida
Language: English
Subfield: Surfaces, Coatings and Films
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2010595644