Smooth, low-bias plasma etching of InP in microwave Cl2/CH4/H2 mixtures
Year: 1992
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.108042
Institution: AT&T (United States)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2010754335
