300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV/sub CEO/>6 V
Year: 2001
Type: article
Source: IEEE Electron Device Letters
DOI: 10.1109/55.936343
Institution: Simon Fraser University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2010780476