Work

Diffusion of Adhesion Layer Metals Controls Nanoscale Memristive Switching

Year: 2010

Type: article

Abstract: Thermal diffusion of Ti through Pt electrode forms Ti atom channels of 1 nm diameter along Pt grain boundaries, seeding switching centers and controlling nanoscale memristive switching. The image shows EFTEM maps of Ti overlaid on HRTEM images for a Si/SiO2 100 nm/Ti 5nm/Pt 15 nm sample in-situ annealed in ultrahigh vacuum at 250 °C for 1 hour.

Source: Advanced Materials

DOI: 10.1002/adma.201000663

Authors: J. Joshua Yang, John Paul Strachan, Qiangfei Xia, Douglas A. A. Ohlberg, Philip J. Kuekes, Ronald D. Kelley, William F. Stickle, Duncan R. Stewart, Gilberto Medeiros‐Ribeiro, R. Stanley Williams

Institution: Hewlett-Packard (United States)

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2010791691

FWCI: 10.88

Cites: 38

Cited by: 111

Related to: 10