Work

Implantation Studies on Silicon-Doped GaN

Year: 2012

Type: article

Source: Journal of Electronic Materials

DOI: 10.1007/s11664-012-2278-0

Authors: Ronnie Simon, Reiner Vianden, Klaus Köhler

Institutions: Forschungszentrum Jülich, Fraunhofer Institute for Applied Solid State Physics

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W2010850849

FWCI: 0.321

Cites: 11

Cited by: 3

Related to: 10