Work

A comprehensive study of SiC growth processes in a VPE reactor

Year: 2002

Type: article

Source: Thin Solid Films

DOI: 10.1016/s0040-6090(01)01597-8

Authors: Thierry Chassagne, Gabriel Ferro, Didier Chaussende, François Cauwet, Yves Monteil, Jean Bouix

Institutions: Lyon 1 Université, Laboratoire des Multimatériaux et Interfaces

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2010944938

FWCI: 6.653

Cites: 12

Cited by: 46

Related to: 10