Erratum: “The role of contact size on the formation of Schottky barriers and ohmic contacts at nanoscale metal-semiconductor interfaces” [J. Appl. Phys. 111 (6), 064302 (2012)]
Year: 2014
Type: erratum
Abstract: The role of contact size on the formation of Schottky barriers and ohmic contacts at nanoscale metal- semiconductor interfaces
Source: Journal of Applied Physics
DOI: 10.1063/1.4892774
Authors: R. A. Kraya, L. Y. Kraya
Institution: University of Pennsylvania
Language: English
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2010950678