Modulation of the absorption coefficient at 13 μm in Ge/SiGe multiple quantum well heterostructures on silicon
Year: 2011
Type: article
Abstract: We report modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon via the quantum-confined Stark effect. Strain engineering was exploited to increase the direct optical bandgap in the Ge quantum wells. We grew 9 nm-thick Ge quantum wells on a relaxed Si0.22Ge0.78 buffer and a contrast in the absorption coefficient of a factor of greater than 3.2 was achieved in the spectral range 1290-1315 nm.
Source: Optics Letters
DOI: 10.1364/ol.36.004158
Institutions: University of Leeds, University of Surrey, University of Warwick
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2010977124