Work

Behavior and mechanism of step bunching during metalorganic vapor phase epitaxy of GaAs

Year: 1995

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.113282

Authors: Masanori Shinohara, Naohisa Inoue

Institution: NTT (Japan)

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2011007642

FWCI: 3.027

Cites:

Cited by: 70

Related to: 10