Work

Growth and characterization of GaN:Mn epitaxial films

Year: 2003

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.1577811

Authors: T. Graf, M. Gjukic, M. Hermann, M. S. Brandt, M. Stutzmann, L. Görgens, J. B. Philipp, O. Ambacher

Institutions: Technical University of Munich, Bavarian Academy of Sciences and Humanities, Walther Meissner Institute, Technische Universität Ilmenau

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Deutsche Forschungsgemeinschaft

OpenAlex ID: W2011064294

FWCI: 3.818

Cites: 26

Cited by: 35

Related to: 10