Measurement of deep states in undoped amorphous silicon by current transient spectroscopy
Year: 1986
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.336715
Authors: H. Kida, K. Hattori, H. Okamoto, Y. Hamakawa
Institution: The University of Osaka
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2011106609