Work

Modification by H-termination in growth process of titanium silicide on Si(001)-2×1 observed with scanning tunneling microscopy

Year: 2009

Type: article

Source: Applied Surface Science

DOI: 10.1016/j.apsusc.2009.05.156

Authors: T. Aoki, K. Shudo, K. Sato, S. Ohno, H. Nishioka, T. Iida, M. Toramaru, M. Tanaka

Institution: Yokohama National University

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2011127281

FWCI: 0.54

Cites: 28

Cited by: 5

Related to: 10