Work

Gate bias stress in hydrogenated and unhydrogenated polysilicon thin film transistors

Year: 1998

Type: article

Source: Microelectronics Reliability

DOI: 10.1016/s0026-2714(98)00098-5

Authors: B. Tala-Ighil, H. Toutah, A. Rahal, K. Mourgues, L. Pichon, F. Raoult, O. Bonnaud, T. Mohammed-Brahim

Institutions: Laboratoire Universitaire des Sciences Appliquées de Cherbourg, Centre National de la Recherche Scientifique, University of Sciences and Technology Houari Boumediene, Université Rennes 1

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2011220573

FWCI: 0.488

Cites: 11

Cited by: 4

Related to: 10