Work

Mg acceptors in GaN: Dependence of the g-anisotropy on the doping concentration

Year: 1999

Type: article

Source: Physica B Condensed Matter

DOI: 10.1016/s0921-4526(99)00402-0

Authors: Detlev M Hofmann, Wolfgang Burkhardt, Frank Leiter, Walter von Förster, Helder Alves, Albrecht Hofstaetter, Bruno K Meyer, Nikolai G Romanov, Hiroshi Amano, Isamu Akasaki

Institutions: Justus-Liebig-Universität Gießen, Russian Academy of Sciences, Ioffe Institute

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2011232829

FWCI: 0.496

Cites: 4

Cited by: 11

Related to: 10