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Effects of post-growth annealing on the structure and electro-optical properties of low-temperature grown GaAs

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Year: 2008
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.2946452
Authors: Doo-Hyeb Youn, Seung-Hwan Lee, Han-Cheol Ryu, Se-Young Jung, Seung-Bum Kang, Min-Hwan Kwack, Sungil Kim, Sang-Kuk Choi, Mun-Cheol Baek, Kwang-Yong Kang, Chang-Seop Kim, Ki-Ju Yee, Young-Bin Ji, Eui-Su Lee, Tae-In Jeon, Seong-Jin Kim, Sanjeev Kumar, Gil-Ho Kim
Institutions: Electronics and Telecommunications Research Institute, Mitsubishi Cable Industries, Ltd. (Japan), Chungnam National University, Sungkyunkwan University
Language: English

Topic: Advanced Semiconductor Detectors and Materials
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences

Open Access status: closed
OpenAlex ID: W2011306426
FWCI: 0.599
Cites: 17
Cited by: 18
Related to: 10
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