Work

Ionisation stimulated defect annealing in GaAs and InP

Year: 2003

Type: article

Source: Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

DOI: 10.1016/s0168-583x(03)00925-x

Authors: W. Wesch, A. Kamarou, E. Wendler, K. Gärtner, P.I. Gaiduk, S. Klaumünzer

Institutions: Friedrich Schiller University Jena, Belarusian State University

Language: English

Topic: Ion-surface interactions and analysis

Subfield: Computational Mechanics

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2011815142

FWCI: 1.559

Cites: 10

Cited by: 18

Related to: 10