Work

Formation energies, electronic structure, and hyperfine fields of chalcogen point defects and defect pairs in silicon

Year: 1991

Type: article

Source: Physical review. B, Condensed matter

DOI: 10.1103/physrevb.43.12494

Authors: H. Overhof, M. Scheffler, C. M. Weinert

Institutions: Paderborn University, Max Planck Society, Fritz Haber Institute of the Max Planck Society, Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2011892196

FWCI: 2.928

Cites: 33

Cited by: 35

Related to: 10