Work

Study of Optimization Guidelines on Nitrogen Concentration in Nitrided Oxide for Logic and Dynamic Random Access Memory Application

Year: 2000

Type: article

Abstract: In this paper, we report on the issues and optimization guidelines for nitrided oxide (NO) gates for logic and dynamic random access memory (DRAM) devices. We intensively studied the dependence of device characteristics on the nitrogen concentration in NO gates. In the case of logic devices, degradation of short channel characteristics in n-channel metal oxide semiconductor field effect transistors (NMOSFETs) and degradation of drive current in p-channel MOSFETs (PMOSFETs) limits the maximum nitrogen concentration. In DRAMs, an additional V T dose to compensate for the decrease of V T in NO gates causes a degradation in the refresh time performance due to the increase of the electric field in the space-charge region. This reveals that, for NO-gate DRAM, the nitrogen concentration should be minimized to prevent the degradation of refresh characteristics.

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.39.2203

Authors: Jong-Wan Jung, Sung-Kye Park, Gyu-Han Yoon, Dae-Kwan Kang, Youngjong Lee

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

Funder: Glaucoma Research Society of Canada

OpenAlex ID: W2011902862

FWCI:

Cites: 11

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Related to: 10