On the role of self-interstitials in impurity diffusion in silicon
Year: 1980
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.327540
Author: R. B. Fair
Institution: AT&T (United States)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2011985488
