Work

GaN growth on 150-mm-diameter (111) Si substrates

Year: 2006

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/j.jcrysgro.2006.10.147

Authors: Akinori Ubukata, Kazutada Ikenaga, Nakao Akutsu, Akira Yamaguchi, Koh Matsumoto, Toshiaki Yamazaki, Takashi Egawa

Institutions: Nagoya Institute of Technology, Nippon Sanso Corporation (Japan)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2011995071

FWCI: 2.45

Cites: 11

Cited by: 70

Related to: 10