Work

Absorptive and Dispersive Switching in a Three Region InGaAsP Semiconductor Laser Amplifier at 1·57 μm

Year: 1990

Type: article

Source: Journal of Modern Optics

DOI: 10.1080/09500349014550651

Authors: P.E. Barnsley, I.W. Marshall, H.J. Wickes, P.J. Fiddyment, J.C. Regnault, W.J. Devlin

Institution: BT Research

Language: English

Topic: Semiconductor Lasers and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2012147426

FWCI: 1.872

Cites: 7

Cited by: 4

Related to: 10