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Complementary Resistive Switching in Niobium Oxide-Based Resistive Memory Devices

Year: 2013

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2012.2235816

Authors: Xinjun Liu, Sharif Md. Sadaf, Sangsu Park, Seonghyun Kim, Euijun Cha, Daeseok Lee, Gun-Young Jung, Hyunsang Hwang

Institutions: Gwangju Institute of Science and Technology, McGill University, Pohang University of Science and Technology

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2012147524

FWCI: 3.533

Cites: 12

Cited by: 68

Related to: 10