Work

Effects of mesa area and orientation on defects in strained InxGa1−xAs films grown by LPOMCVD

Year: 1991

Type: article

Source: Journal of Electronic Materials

DOI: 10.1007/bf02665956

Authors: J. R. Jones, S. H. Jones, M. F. Zybura, L. K. Seidel, D. K. Oh

Institutions: University of Virginia, Electronics and Telecommunications Research Institute

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, National Aeronautics and Space Administration

OpenAlex ID: W2012173152

FWCI: 0.687

Cites: 12

Cited by: 6

Related to: 10