Work

Characterization of high-purity Si-doped molecular beam epitaxial GaAs

Year: 1985

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.336243

Authors: B. J. Skromme, S. S. Bose, B. Lee, T. S. Low, T. R. Lepkowski, R. Y. DeJule, G. E. Stillman, J. C. M. Hwang

Institution: University of Illinois Urbana-Champaign

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2012174752

FWCI: 8.215

Cites: 57

Cited by: 98

Related to: 10