High-Rate Deposition of Microcrystalline Silicon Photovoltaic Active Layers by Plasma-Enhanced Chemical Vapor Deposition at Kilo-Pascal Pressures
Year: 2007
Type: article
Abstract: High-rate depositions of microcrystalline silicon (µc-Si) have been investigated for photovoltaic applications employing plasma-enhanced chemical vapor deposition excited at a very high frequency of 100 MHz. Very high-deposition rates of up to 7.3 nm/s have been achieved by introducing depositions at very high pressures of 1.2–3.2 kPa (9–24 Torr). Moreover, by applying the µc-Si deposited at 7.1 nm/s to the photovoltaic active i -layer of the n – i – p solar cells, a conversion efficiency of 5.10% ( J sc = 18.8 mA/cm 2 , V oc = 0.460 V, FF = 59.0%) has been achieved. We discuss the effects of the microstructures on the photovoltaic performance.
DOI: 10.1143/jjap.46.l199
Institution: The University of Osaka
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2012181842