Raman Image Measurements of Laser-Recrystallized Polycrystalline Si Films by a Scanning Raman Microprobe
Year: 1986
Type: article
Abstract: We have measured two-dimensional Raman intensity images of laser-recrystallized polycrystalline silicon islands on insulators by a scanning Raman microprobe. It is found that crystallites with about ten µm size grow along the scanning direction of an annealing laser. The crystallographic orientations of the crystallites have been determined by Raman microprobe polarization measurements.
DOI: 10.1143/jjap.25.l222
Authors: Shin-ichi Nakashima, Kohji Mizoguchi, Yasuo Inoue, Michihiro Miyauchi, Akiyoshi Mitsuishi, Tadashi Nishimura, Yoichi Akasaka
Institutions: The University of Osaka, Mitsubishi Electric (Japan)
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2012196882