Work

High-speed, low-noise metal–semiconductor–metal ultraviolet photodetectors based on GaN

Year: 1999

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.123303

Authors: D. Walker, E. Monroy, P. Kung, J. Wu, M. Hamilton, F. J. Sanchez, J. Diaz, M. Razeghi

Institutions: Northwestern University, Universidad Politécnica de Madrid

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2012252007

FWCI: 8.019

Cites: 12

Cited by: 189

Related to: 10