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Photoluminescence of Semi‐insulating InP Wafers Prepared by Two‐Step Wafer Annealing

Year: 1998

Type: article

Abstract: InP wafers with very low residual Fe concentrations were subjected to a two‐step wafer annealing procedure and were then measured by photoluminescence. A sharp line at 1.3618 eV was clearly observed after the first step high temperature annealing, and was largely reduced after the second step medium temperature annealing. This sharp line seems to be due to vacancy‐related defects. The reduction may cause the improvement of the electrical property uniformity.

Source: Journal of The Electrochemical Society

DOI: 10.1149/1.1838387

Authors: M. Uchida, O. Oda, M. Warashina, M. Tajima

Institutions: Institute of Space and Astronautical Science, Japan Energy Inc. (Japan)

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W2012277982

FWCI:

Cites:

Cited by: 4

Related to: 10