Reactive ion etching induced damage in GaAs and AlGaAs using C2H6/H2/Ar or CCl2F2/O2 gas mixtures
Year: 1989
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.344296
Authors: S. J. Pearton, U. K. Chakrabarti, W. S. Hobson
Institution: AT&T (United States)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2012296282