Work

Temperature dependence of the photoluminescence properties of self-assembled InGaAs∕GaAs single quantum dot

Year: 2006

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.2387054

Authors: Manish K. Bafna, P. Sen, P. K. Sen

Institution: Shri Govindram Seksaria Institute of Technology and Science

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Department of Science and Technology, Ministry of Science and Technology, India, All India Council for Technical Education

OpenAlex ID: W2012453565

FWCI: 0.564

Cites: 18

Cited by: 11

Related to: 10