Year: 2006
Type: article
Abstract: A Schottky split gate technique is used to form lateral quantum dots in the two-dimensional electron gases of a high-mobility Si/SiGe heterostructure. e-beam defined palladium gates show Schottky barriers with very well controlled leakage currents. At low temperatures we observe Coulomb-blockade and stability diamonds on lateral quantum dots containing less than 25 electrons. The experiments demonstrate that, in contrast to recent reports, Schottky gates are a feasible approach for the fabrication and integration of single electron transistors in the strained Si/SiGe heterostructure.
Institution: Johannes Kepler University of Linz
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
Funder: Austrian Science Fund
OpenAlex ID: W2012492007