Work

Characteristics of aluminum-silicon Schottky barrier diode

Year: 1969

Type: conference-abstract

Source: Technical digest - International Electron Devices Meeting/Technical digest

DOI: 10.1109/iedm.1969.188191

Author: A.Y.C. Yu

Institution: Fairchild Semiconductor (United States)

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2012686489

Cites:

Cited by: 5

Related to: 10