Work

Fabrication of Si and SiGe vertical dual carrier field effect transistor and its SOI resistor load switching ASIC with effective channel length of 30nm

Year: 2003

Type: conference-paper

Source: IEEE International Conference on ASIC (ASICON)

DOI: 10.1109/icasic.2003.1277465

Authors: Li, Yang, Tang, Yang, Han, Huang, Xu, Xu, Zhang, Lin, Wu, Chen, Ji, Yan, Ren, Yu, Cai, Tian, Du, Huang

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2013083334

FWCI: 0.897

Cites: 5

Cited by: 6

Related to: 10