Year: 2006
Type: article
Abstract: A GaInNAs bandgap difference confinement (BDC) semiconductor optical amplifier (SOA) utilizing a bandgap difference between an active region and a cladding region for current confinement was developed for the first time. Due to strong current and optical confinements in the lateral direction, this SOA exhibited a 4.3 dB larger chip gain and 2.1 dB smaller fiber coupling loss than the conventional GaInNAs-buried-ridge-stripe (BRS) SOA. In addition, the gain dependence of the GaInNAs-BDC-SOA on temperature was found to be much smaller than that of the conventional InP-based-SOA, and comparable to that of the GaInNAs-BRS-SOA.
DOI: 10.1143/jjap.45.1635
Authors: Jun-ichi Hashimoto, Kenji Koyama, Tsukuru Katsuyama, Yukihiro Tsuji, Kousuke Fujii, Koichiro Yamazaki, Akira Ishida
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2013097616