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On the growth process of Cu2ZnSn(S,Se)4 absorber layer formed by selenizing Cu–ZnS–SnS precursors and its photovoltaic performance

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Year: 2014
Type: article
Source: Solar Energy Materials and Solar Cells
DOI: 10.1016/j.solmat.2014.09.023
Authors: Jianjun Li, Yi Zhang, Hongxia Wang, Li Wu, Jiguo Wang, Wei Liu, Zhiqiang Zhou, Qing He, Yun Sun
Institutions: Nankai University, Queensland University of Technology
Language: English

Topic: Chalcogenide Semiconductor Thin Films
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
SDG: Affordable and clean energy

Open Access status: closed

Funders: National Natural Science Foundation of China, Australian Research Council
Awards: G3441244427, 含MX结构单元(M=Fe,Co,Ni, X=S,Se,P)新型层状化合物合成、结构和物性研究, G6655316519, G7140909974, Quantum dot-sensitised solar cells: can efficiency beyond the Shockley-Queisser limit be achieved?
OpenAlex ID: W2013100492
FWCI: 2.595
Cites: 39
Cited by: 51
Related to: 10
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