Trap states in AlGaN channel high-electron-mobility transistors
Year: 2013
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.4832482
Authors: ShengLei Zhao, Kai Zhang, Wei Ha, YongHe Chen, Peng Zhang, JinCheng Zhang, XiaoHua Ma, Yue Hao
Institution: Xidian University
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2013270602