Improvement of lattice site location of Ga implanted into Al after pulsed electron beam annealing
Year: 1980
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.91913
Authors: T. Hussain, J. Geerk, F. Ratzel, G. Linker
Language: English
Subfield: Surfaces, Coatings and Films
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2013329428
